Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths
نویسندگان
چکیده
Two-dimensional Si-based photonic crystals with embedded Ge nanoislands were studied. In particular, dependences of the steady-state and time-resolved photoluminescence response on depth air-holes which form crystal itself investigated. It was shown that maximum luminescence intensity observed not for fully-etched but intermediately etched ones. The possible origin such a behavior is discussed. Keywords: SiGe heterostructures, islands, Photonic crystals, Photoluminescence, non-radiative recombination.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2023
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/tpl.2023.05.56033.19511